IPP04CN10N G

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IPP04CN10N G datasheet

• Маркировка
  IPP04CN10N G
• Производитель
  Infineon Technologies
• Описание
  Infineon Technologies IPP04CN10N G Configuration: Single Continuous Drain Current: 100 A Drain-source Breakdown Voltage: 100 V Forward Transconductance Gfs (max / Min): 165 S, 83 S Gate Charge Qg: 210 nC Gate-source Breakdown Voltage: +/- 20 V Lead Free Status / Rohs Status: Lead free / RoHS Compliant Maximum Operating Temperature: + 175 C Minimum Operating Temperature: - 55 C Mounting Style: Through Hole Package / Case: TO-220 Power Dissipation: 300000 mW Resistance Drain-source Rds (on): 0.0042 Ohm @ 10 V Transistor Polarity: N-Channel Product Category: MOSFET RoHS: yes Drain-Source Breakdown Voltage: 100 V Gate-Source Breakdown Voltage: +/- 20 V Resistance Drain-Source RDS (on): 3.9 mOhms Fall Time: 25 ns Forward Transconductance gFS (Max / Min): 165 S, 83 S Rise Time: 78 ns Typical Turn-Off Delay Time: 76 ns Part # Aliases: IPP04CN10NGHKSA1 IPP04CN10NGXKSA1 SP000311499 Other Names: IPP04CN10NGXK
• Количество страниц
  11 шт.
• Форматы файла
  HTML, PDF

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